Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices

Abstract

In this paper, the effects of various defects on the initial electrical characteristics of planar-MOSFET devices were investigated. The measurement results revealed that some pit defects that resulted from the fabrication process were as harmful as traditional killer defects in Schottky barrier diode devices. These pit defects could be observed and distinguished by photoluminescence imaging technology. It is necessary to inspect wafers during fabrication—especially before the film deposition process, when the pit defects are easily overlaid and hidden.