Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons-Reference-Cited by-同舟云学术

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Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons

Published:2011-08 Issue: Volume:88-89 Page:346-349
ISSN:1662-7482
Container-title:Applied Mechanics and Materials
language:
Short-container-title:AMM

Author:

Yang Jie¹,Hu You Zhi¹,Wu Zhan Cheng¹

Affiliation:

1. Shijiazhuang Mechanical Engineering College

Abstract

Within former research, it has been found that Collection to Base (CB) reversal junction of partial kinds of high-frequency low-power Silicon dynatrons is the most sensitive port to ESD. It is different from what people know as usual. By the computer emulation, the failure mechanism of ESD injection is analyzed. And the difference between CB reversal junction and EB reversal junction has been discussed in detail.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/AMM.88-89.346.pdf

Reference8 articles.

1. Y.L. Sun: Static Control Technology in Electronic Industry (Electronic Industries Publishing Company, Beijing, China 1995).

2. Sh. H. Liu: ESD Theory and Protection (Enginery Industry Publishing Company, Beijing, China 1999).

3. D.J. Qiao: Electronic Devices EMP Effect Handbook (Northwest Unclear Technology Institute, Xi'an, China 1992).

4. MIL-STD-883C, Method 3015. 2: Electrostatic discharge sensitivity test, U.S. (1983).

5. MIL-STD-750D, Method 1020: Electrostatic Discharge Sensitivity Classification, U.S. (2002).

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