Affiliation:
1. North University of China
Abstract
In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.
Publisher
Trans Tech Publications, Ltd.
Reference5 articles.
1. Jian Wang, Rongyan Chuai, Xiaoyu He, etc. Polysilicon Nano-film Piezoresistive Pressure Sensor. [J]. Instrument Technique and Sensor, 2009, (9), 6-8.
2. Xiaolong Sun. Using Finite Element Simulation Calculate Output-voltage of MEMS Piezoresistive Pressure Sensor. [J]. Instrument Technique and Sensor, 2010, (8), 12-14.
3. Xianghua Cheng, Yanzhong Li, Hongbo Li. The analysis of the effect on temperattIre characteristic of pressure transducer. [J]. LT Electronics, 2005, 34(1), 63-67.
4. Yanhong Zhang, Bingwu Liu, Litian Liu, etc. Design and Fabrication of a Novel Silicon Pressure／{TTP}-241 Temperature Microsensor. [J]. Chinese Journal Of Sensors And Actuators，2006. 19(6), 2376-2379.
5. MOSSAD A A. HKAO I. SELLCHI H. Structural and photo1uminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced Chemical vapor deposition. Applied SuffaceSclence. 2006, 253(3), 1198—1204.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献