Affiliation:
1. Nanjing Electronic Devices Institute
Abstract
In this paper, a novel RF MEMS switch driven by combs with low insertion loss is presented. The developed SPST RF MEMS switch with a lateral resistive contact and gold structure layer on a silicon substrate has been fabricated by surface micromachining process. The RF performance of the switch indicates an insertion loss below 0.30 dB at 20 GHz, a return loss better than 20 dB and isolation greater than 30 dB. Good RF characteristics have been achieved by the large contact area and a lateral Au-to-Au resistive contact.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference5 articles.
1. Raafat R. Mansour and Mojgan Daneshmand：RF MEMS Switches and Switch Matrices. University of Waterloo, Waterloo, Ontario, Canada. Mojgan@MEMS. uwaterloo. ca.
2. G M Rebeiz and J B Muldavin: 2001 RF MEMS switches and switch circuits. IEEE Mircrow. Mag. 2 59–71.
3. A. Q. Liu, W. Palei, M. Tang, and A. Alphones： Microstrip Lateral RF MEMS Switch Integrated with Multi-Step CPW Transition[J]．JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL. 7, NO. 3, SEPTEMBER, 2007：93-95.
4. Sungchan Kang, Sungsoo Moon, et al：See-saw Type RF MEMS Switch with Narrow Gap Vertical Comb[J]．JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL. 7, NO. 3, SEPTEMBER, 2007：177-182.
5. Ching-Liang Dai, et al：Design and Fabrication of RF MEMS Switch by the CMOS Process[J]． Journal of Science and Engineering, Vol. 8, No 3, pp. 197_202 (2005)：197-202.