Abstract
InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, AlN, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference10 articles.
1. S. Nakamura et al., Japanese Journal of Applied Physics 35, L74 (1996).
2. K. Yanashima et al., Journal of Electronic Materials 28, 287 (1999).
3. C. B. Soh et al., phys. stat. sol. (c) 4, 2433 (2007).
4. J. Ristic et al., phys. stat. sol. (b) 234, 717 (2002).
5. L. Liliental-Weber et al., phys. stat. sol. (c) 4, 2469 (2007).
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献