Electrical Characteristics and Microstructures of Dy2O3-Doped Bi4Ti3O12 Thin Films

Abstract

Dy2O3-doped bismuth titanate (Bi4-xDyxTi3O12: BDT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BDT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization (Pr) and coercive field (Ec) of the BDT Film with x = 0.8 were 20 μC/cm2and 60 KV/cm, respectively. After 3 × 1010switching cycles, 20% degradation of Pris observed in the film.