Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics
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Published:2009-12
Issue:
Volume:421-422
Page:201-204
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ISSN:1662-9795
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Container-title:Key Engineering Materials
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language:
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Short-container-title:KEM
Author:
Sakaguchi Isao1,
Nakagawa Tsubasa1,
Matsumoto Kenji1,
Hishita Syunichi1,
Adachi Yutaka1,
Ohashi Naoki2ORCID,
Haneda Hajime1
Affiliation:
1. National Institute for Materials Science
2. National Institute for Materials Science (NIMS)
Abstract
The relationship between the defect structure and luminescence property of ZnO ceramics implanted with Ar of 2×1015 – 60×1015 ions/cm2 was studied. After annealing, the heavy dose-implanted sample (Ar ≥ 30×1015 ions/cm2) was characterized by a luminescence peak at the 730-nm wavelength. Defects in the implanted region formed voids during post-annealing. Oxygen tracer experiments indicated that grain boundary diffusion in the implanted region was enhanced significantly.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science