Abstract
We first present a Review about the preparation of alumina as thin films by the technique
of MOCVD at low temperature (550°C and below). Then we present our results about thin films
prepared by the low pressure MOCVD technique, using aluminium tri-isopropoxide as a source,
and characterized by elemental analysis (EMPA, EDS, ERDA, RBS), FTIR, XRD and TGA. The
films were grown in a horizontal, hot-wall reactor, with N2 as a carrier gas either pure or added with
water vapour. The deposition temperature was varied in the range 350-550°C. The films are
amorphous. Those prepared at 350°C without water added in the gas phase have a formula close to
AlOOH. Those deposited above 415°C are made of pure alumina Al2O3. When water is added in
the gas phase, the films are pure alumina whatever the deposition temperature.
Publisher
Trans Tech Publications Ltd
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