Abstract
We first present a Review about the preparation of alumina as thin films by the technique
of MOCVD at low temperature (550°C and below). Then we present our results about thin films
prepared by the low pressure MOCVD technique, using aluminium tri-isopropoxide as a source,
and characterized by elemental analysis (EMPA, EDS, ERDA, RBS), FTIR, XRD and TGA. The
films were grown in a horizontal, hot-wall reactor, with N2 as a carrier gas either pure or added with
water vapour. The deposition temperature was varied in the range 350-550°C. The films are
amorphous. Those prepared at 350°C without water added in the gas phase have a formula close to
AlOOH. Those deposited above 415°C are made of pure alumina Al2O3. When water is added in
the gas phase, the films are pure alumina whatever the deposition temperature.
Publisher
Trans Tech Publications Ltd
Reference65 articles.
1. D. Samélor, M.M. Sovar, A. Stefanescu, A.N. Gleizes, P. Alphonse and C. Vahlas: Fifteenth European Conference on Chemical Vapor Deposition (EUROCVD-15), (A. Devi, R. Fischer, H. Parala, M. Allendorf and M. Hitchmann, editors, The Electrochemical Society, Inc., Pennington, NJ, USA 2005) Vol. PV 2005-09, p.1051.
2. J.A. Aboaf: J. Electrochem. Soc. Vol. 114 (1967), p.948.
3. N.Y. Turova, V.A. Kozunov, A.I. Yanovskii, N.G. Bokii, Y.T. Struchkov and B.L. Tarnopol'skii: J. Inorg. Nucl. Chem. Vol. 41 (1979), p.5.
4. W. Fieggen, H. Gerding and N.M.M. Nibbering: Rec. Trav. Chim. Vol. 87 (1968), p.377.
5. V.J. Shiner, D. Whittaker and V.P. Fernandez: J. Am. Chem. Soc. Vol. 85 (1963), p.2318.
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