Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission-Reference-Cited by-同舟云学术

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Author:

Shigiltchoff O.¹,Bai Song¹,Devaty Robert P.¹,Choyke Wolfgang J.¹,Kimoto Tsunenobu²,McD. Hobgood H.³,Neudeck Philip G.⁴,Porter L.M.⁵

Affiliation:

1. University of Pittsburgh

2. Kyoto University

3. Cree, Incorporation

4. NASA Glenn Research Center (GRS)

5. Carnegie Mellon University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

Reference9 articles.

2. O. Shigiltchoff, S. Bai, R.P. Devaty, W.J. Choyke, T. Kimoto, D. Hobgood, P.G. Neudeck and L.M. Porter (to be published).

4. R. Williams Injection by Internal Photoemission, Ed. R.K. Willardson, Semiconductors and Semimetals, (Academic Press, New York, 1966).

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