Large Diameter and Long Length Growth of SiC Single Crystal
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST)
2. UPR Ultra-Low-Loss Power Device Technology Research Body
3. R&D Partnership for Future Power Electronics Technology
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.457-460.99.pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enlargement Growth of Large 4H-SiC Bulk Single Crystal;Materials Science Forum;2011-03
2. Characterization of the carrot defect in 4H-SiC epitaxial layers;Journal of Crystal Growth;2010-05
3. Procedures for determining acoustical physical constants of class 6mm single crystals by ultrasonic microspectroscopy technology;Journal of Applied Physics;2009-06
4. Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal;Materials Science Forum;2008-09
5. Electric Discharge Machining for Silicon Carbide and Related Materials;Materials Science Forum;2008-09
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