Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs-Reference-Cited by-同舟云学术

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Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs

Published:2003-09 Issue: Volume:433-436 Page:669-672
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kiritani Norihiko¹,Hoshi Masakatsu²,Tanimoto Satoshi²,Adachi Kazuhiro³,Nishizawa Shin Ichi³,Yatsuo Tsutomu⁴,Okushi Hideyo⁵,Arai Kazuo³

Affiliation:

1. UPR Ultra-Low-Loss Power Device Technology Research Body

2. Nissan Motor Co., Ltd.

3. National Institute of Advanced Industrial Science and Technology (AIST)

4. National Institute of Advanced Industrial Science and Technology, AIST

5. National Institute of Advanced Industrial Science and Technology AIST, PERC

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.669.pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-aligned contacts to ion implanted S/D regions in 4H-SiC;Materials Science in Semiconductor Processing;2023-12

2. Regression Model for the Specific Contact Resistance of SiC Ohmic Contacts;IEEE Transactions on Semiconductor Manufacturing;2021-11

3. Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide;Journal of Electronic Materials;2019-02-12

4. On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET);IEEE Transactions on Industrial Electronics;2017-10

5. Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme;IEEE Electron Device Letters;2016-12

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