Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes-Reference-Cited by-同舟云学术

Electrical Characterisation of the Gamma and UV Irradiated Epitaxial 1.2 kV 4H-SiC PiN Diodes

Published:2004-06 Issue: Volume:457-460 Page:1487-1490
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Wolborski Maciej¹,Bakowski Mietek²,Klamra W.

Affiliation:

1. KTH, Royal Institute of Technology

2. Acreo AB

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1487.pdf

Reference6 articles.

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3. U. Zimmermann, A. Hallen, B. Breitholtz; Materials Sc. Forum 338-342 (2000) p.1323.

4. R. Patel, V. Khemka, N. Ramungul, T.P. Chow, M. Ghezzo and J. Kretchmer; Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, p.387.

5. T. Dalibor, G. Pensl, T. Kimoto, H. Matsunami, S. Sridhara, R.P. Devaty, W.J. Choyke; Diamond and related materials 6 (1997) p.1333.

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