Single Contact-Material MESFETs on 4H-SiC-Reference-Cited by-同舟云学术

Single Contact-Material MESFETs on 4H-SiC

Published:2004-06 Issue: Volume:457-460 Page:1221-1224
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Tanimoto Satoshi¹,Inada Masaki²,Kiritani Norihiko³,Hoshi Masakatsu¹,Okushi Hideyo²,Arai Kazuo⁴

Affiliation:

1. Nissan Motor Co., Ltd.

2. National Institute of Advanced Industrial Science and Technology AIST, PERC

3. UPR Ultra-Low-Loss Power Device Technology Research Body

4. National Institute of Advanced Industrial Science and Technology (AIST)

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1221.pdf

Reference7 articles.

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2. K. E. Moore, C. E. Weizel, K. J. Nordquist, L. L. Pond, III, J. W. Palmour, S. Allen and H. Carter, Jr., IEEE Electron Dev. Lett., Vol. 18, (1997), p.69.

3. J. B. Petit, P. G. Neudeck, C. S. Salupo, D. J. Larkin and J. A. Powell, Inst. Phys. Conf. Ser., Vol. 137 (1994), p.679.

4. T. Teraji, S. Hara, H. Okushi and K. Kajimura, Appl. Phys. Lett., Vol. 71 (1997), p.689.

5. S. Tanimoto, J. Senzaki, Y. Hayami, M. Hoshi and H. Okushi, Low Resistivity Ohmic Contacts to Phosphorus Ion-Implanted 4H-SiC Accomplished without Post-Deposition Annealing, a paper presented at 2000 Electronic Material Conference (Denver, Colorado, June 2000).

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