Effect of Growth Temperature on Cobalt-Doped TiO<sub>2</sub> Thin Films Deposited on Si (100) Substrate by MOCVD Technique-Reference-Cited by-同舟云学术

Effect of Growth Temperature on Cobalt-Doped TiO₂ Thin Films Deposited on Si (100) Substrate by MOCVD Technique

Published:2014-02 Issue: Volume:896 Page:192-196
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Saripudin Aip¹,Saragih H.²,Khairurrijal ³,Khairurrijal ¹,Arifin Pepen¹

Affiliation:

1. Bandung Institute of Technology

2. Universitas Advent Indonesia

3. Institut Teknologi Bandung

Abstract

Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.896.192.pdf

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