Effect of Substrate Temperature on Properties of CuInSe2 Thin Films Deposited by Magnetron Sputtering

Abstract

CuInSe2thin films were successfully deposited by magnetron RF-sputtering at different substrates temperature (100°C, 200°C, 300°C, 400°C, and 500°C). Effect of substrate temperature on these films crystallization, morphologies, and electrical properties were investigated. Results showed that increase of substrate temperature is in favor to be constituted in a chalcopyrite phase with a preferential orientation of (112), (211) and (312). The morphology images implied the film deposited at 200 oC had smoother surface than others. Furthermore, it was indicated that substrates temperature of 200°C had the best electrical and optical properties among these samples.