Abstract
An analytical model for the time dependent characteristic of ion implanted buried gate MESFET have been obtained by solving continuity equation with variation of light , turning ON and OFF in the active layer of buried gate through the optical fiber. This paper provides new insight into the cause of channel conductance variation in an ion implanted buried gate MESFET with front side illumination. At time‘t’ is equal to zero, the light through the optical fiber is turning ‘ON’ and ‘OFF’ has been considered. The channel conductance of the buried gate MESFET evaluated with front side illumination. These results indicate very good performance of the device compared with the other devices like MESFET with back and front illumination. Buried gate MESFET highly used in Aerospace System Technology and Microwave communication.
Publisher
Trans Tech Publications, Ltd.
Reference5 articles.
1. Jaya. T, Kannan. V, Analytical Model for I-V Characteristics of Buried Gate MESFET,, IJAST, Vol. 17, pp.2350-2353, JULY (2010).
2. Nandita Saha Roy, B.B. Pal and R.U. Khan, Analysis of GaAs OPFET with Improved Optical Absorption under Back Illumination, IEEE Transactions Election Devices, Vol. 46, pp.2350-2353, Dec (1999).
3. Shubha, B. B. Pal, and R. U. Khan, Optically controlled ion-implanted GaAs MESFET characteristics with opaque gate, IEEE Trans. Electron Devices, Vol. 45, p.78–84, Jan. (1998).
4. V. K. Singh, S. N. Chattopadhyay, and B. B. Pal, Optically-controlled characteristics of an ion-implanted Si MESFET, Solid-State Electronics, Vol. 29, pp.707-711, (1986).
5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1983, p.755.