Effect of Residual Stress on P Doped Nano-Crystalline Silicon Deposited by HWCVD Films

Abstract

p doped nano-crystal l ine si l icon (nc-Si) were deposi ted by hot wire chemical vapour deposi t ion (HWCVD) using SiH4 , H2 and B2H6 precursors. nc-Si was characterized by XRD, Raman and residual st ress. Residual stress of nc-Si were measure by Sin2ψ vs d method. As deposi ted fi lms show tensi le st ress and decreases from 2500 MPa to 250 MPa wi th increase of B2H6 f low rate f rom 0.01 to 5 %. Crystal l ine f ract ion of p doped nc-Si decreases f rom 35 to 57% as wi th increase of B2H6 concent rat ion