Growth and Field Emission Properties of the Carbon Complex Films

Abstract

The carbon complex film, Which consists of diamond grains, carbon nanotubes, amorphous carbon composition, were fabricated by microwave plasma chemical vapor deposition （MPCVD） method. The ceramic with a Ti mental layer was used as substrate. The carbon complex films were evaluated by Raman scattering spectroscopy, x-ray diffraction spectrum, scanning electron microscope. The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide anode was used for observing and characterizing the field emission. The turn-on field was only 0.55V/μm and emission current density as high as 11mA/cm2 was obtained under an applied field of 2.18V/μm for the first operation. The growth mechanism and field emission properties of the carbon complex films are discussed relating to microstructure and electrical conductivity.