Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures-Reference-Cited by-同舟云学术

Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures

Published:2011-07 Issue: Volume:276 Page:77-85
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Majkusiak Bodgan¹,Mazurak Andrzej¹

Affiliation:

1. Warsaw University of Technology

Abstract

The paper discusses some issues of modeling the MOS tunnel structure with a gate stack containing a semiconductor quantum well (double barrier MOS system). The considerations are illustrated by simulations with the use of a theoretical model. Results of simulations are compared with experimental characteristics of fabricated DB MOS diodes.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.276.77.pdf

Reference9 articles.

1. B. Majkusiak: in Nanoscaled Semiconductor-on-Insulator Structures and Devices, edited by S. Hall et al., Springer (2007).

2. A. Mazurak, J. Walczak and B. Majkusiak: 16th Workshop WoDiM 2010, Bratislava, Slovakia, Jun. 28-20, 2010, Book of Abstract, p.32, and submitted to J. Vac. Sci. & Techn. B (2010).

3. B. Majkusiak: J. Computational Electronics, Vol. 6 (2007), p.207.

4. P. Palestri et al.: IEEE Trans. Electron Dev., Vol. 54 (2007), p.106.

5. J. Grabowski, A. Mazurak, T. Płociński, M. Andrzejczak, K.J. Kurzydłowski, B. Majkusiak and R.B. Beck: 6th Workshop Diagnostics & Yield D&Y 2009, Warsaw, Poland, Jun. 22-24, (2009).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx;Solid-State Electronics;2019-09

2. Simulations of transient processes and characteristics of the nc-MOS structures;Microelectronic Engineering;2017-06

3. Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure;SPIE Proceedings;2013-07-25