Affiliation:
1. Ming-Hsin University of Science & Technology
2. Ming-Hsin University of Science and Technology
Abstract
The characteristics and feasibility of the dielectric can be evaluated by the deposition of the dielectric in between two electrodes to form a capacitor. In metal-insulator-silicon (MIS) structure, 100 Å Ta2O5films are deposited on 1000 Å doped poly silicon as a bottom electrode layer and 500 Å TiN metal on top of the dielectric film consecutively [1]. The measured capacitances of larger areas roll off at higher measuring frequency [2]. With the setting of an equivalent circuit, one successfully explains why the roll-off effect shows up. The deduced formulas give the common, reasonable, and convincing C1=1.1255×10-5nF/mm2, which determines the equivalent dielectric (oxide) thickness 30.5Å.
Publisher
Trans Tech Publications, Ltd.
Reference4 articles.
1. Hsin-Chia Yang and Yi-Chang Cheng, Japanese Journal of Applied Physics, vol. 44, No. 4A. 2005. pp.1711-1716.
2. Thomas Chang, SEMICON Taiwan, 1999, p.245–250.
3. Steve Yang, (Hsin-Chia Yang) , SEMICON Taiwan, 1999, p.395–398.
4. Hsin-Chia Yang, Determination of Capacitance of DRAM Capacitor as Encountering Roll-Off problems, IEEE, international conference, ICEMI 2009, 4-585.