Affiliation:
1. University of Auckland
Abstract
A novel silicon-based light emitting structure comprising a lithium doped zinc oxide film and a high energy electrons generating silicon structure is presented. Red light emission with wavelength of ~630 nm is generated and recorded in electroluminescent spectrum under an applied DC voltage of 8.5 V.
Publisher
Trans Tech Publications, Ltd.
Reference7 articles.
1. H.T. Hattori, C. Seassal, E. Touraille, P. Rojo-Romeo, X. Letartre, G. Hollinger, P. Viktorovitch, L. Di Cioccio, M. Zussy, L.E. Melhaoui, J.M. Fedeli, Heterogeneous integration of microdisk lasers on silicon strip waveguides for optical interconnects, IEEE Photonics Technology Letters, Vol. 18, (2006).
2. T. Egawa, T. Jimbo, M. Umeno, Optoelectronic integrated circuit grown on Si using selective regrowth by MOCVD, Technical Digest of Electron Devices Meeting, (1991).
3. F. Chen, Z. Salcic, W. Gao, C.C. Wong, F.A. Chollet, On-chip ZnO-ITO light emitting/laser structure and non-phosphor white light emitter, Invention Disclosure, The University of Auckland, March 2008, provisional US patent.
4. F. Chen, Z. Salcic, W. Gao, Optoelectronic Components, Invention Disclosure, The University of Auckland, November 2008, provisional US patent.
5. H. Na, Jong, M. Kitamura, M. Arita, Y. Arakawa, Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors, Applied Physics Letters, Vol. 95, (2009).
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1 articles.
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