Numerical Simulation of AlxGa1-XN/GaN Hetero Junction Quantum Well by AMPS-1D

Abstract

In this work, the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D) is used to study the performances of depth of AlxGa1-xN/GaN heterojunction quantum well. The calculated results of AMPS-1D software show that the effect of different Al composition on the depth of AlxGa1-xN/GaN heterojunction quantum well is slight. On the other hand, the effect of different doped concentration in AlxGa1-xN is obvious.