Affiliation:
1. National University of Defense Technology
Abstract
In this paper, we analyzed the endurance of Nand Flash memory and then proposed a level adjusting scheme to use the MLC Flash dynamically to storage different amount of data levels through the entire lifetime. The result shows that the MLC SSD adopting this method could be totally written 4.8X more data than conventional MLC SSD and 16.5% more than SLC SSD.
Publisher
Trans Tech Publications, Ltd.
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