Modeling and Simulation of Reflection Mode Gallium Nitride Photocathode

Abstract

We made the modeling and simulation of the previously experimental GaN photocathode. During the construction of the GaN model, we found some important properties that influence the final simulation result, which includes: the settings of the grid, the definition of the cesium layer and the simulation method that is used when processing the calculation. The result shows that at some wavelengths, the spectral response changed very abruptly and its cut off wavelength was 380nm not 365nm. This early job supplies the inspiration for the further research work in this area.