Abstract
CoSiN film can be used as diffusion barrier layer in ULSI-Cumetallization.CoSiN/Cu/CoSiN/SiO2/Si films are prepared by magnetron sputtering technology. Four-point-probe, SGC-10,Atomic forced microscopy (AFM) are used to detect the resistivity,film thickness and surface morphology. It is investigated the barrier performance of CoSiN film for Cu metallization in sub-45nm technology. The results shows that the resistivity and the components ofCoSiN/Cu/CoSiN/SiO2/Si film do not have the obvious change after being annealing at 550°C in Ar atomosphere, and CoSiN film can keep good barrier performance for Cu line. This multi-film shows good thermal stability .
Publisher
Trans Tech Publications, Ltd.
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