Determination of Residual Stress Fields in a Thermally Grown Oxide under Thermal Cycling Loadings, Using XRD and Raman Spectroscopy — Correlations with Microstructural States-Reference-Cited by-同舟云学术

Determination of Residual Stress Fields in a Thermally Grown Oxide under Thermal Cycling Loadings, Using XRD and Raman Spectroscopy — Correlations with Microstructural States

Published:2014-08 Issue: Volume:996 Page:890-895
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Rakotovao Felaniaina¹,Tao Zhao Jun²,Grosseau-Poussard Jean Luc³,Panicaud Benoit²,Bonnet Gilles³,Girault Patrick³,Guerain Mathieu³

Affiliation:

1. Université de La Rochelle

2. Université de Technologie de Troyes (UTT)

3. Université de La Rochelle, Pôle Science et Technologie

Abstract

The presence of residual stresses in thermal oxide layers has been recognized for a long time. In the present work, the mechanical fields for chromia oxide are determined either by XRD or Raman spectroscopy. In addition, the microstructure of the chromia films is investigated ant its influence on the evolution of the stress release processes is analyzed.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.996.890.pdf

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