The Photoluminescence from (Eu, Yb) Co-Doped Silicon-Rich Si Oxides-Reference-Cited by-同舟云学术

The Photoluminescence from (Eu, Yb) Co-Doped Silicon-Rich Si Oxides

Published:2014-06 Issue: Volume:936 Page:207-211
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Heng Cheng Lin¹,Su Wen Yong¹,Zhang Qi Wei¹,Ren X.Q.²,Yin P.G.²,Pan H.P.³,Yao S.D.³,Finstad Terje G.⁴

Affiliation:

1. Beijing Institute of Technology

2. Beihang University

3. Peking University

4. University of Oslo

Abstract

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N2, strong PL were observed from Eu and Yb3+ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 °C) while the Eu2+ emission is dominating for annealing at 1000 °C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.936.207.pdf

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