Affiliation:
1. Harbin University of Science and Technology
Abstract
This paper presents the calculation model of capacitive RF-MEMS switch for the isolation and insertion loss, and then adopts CST software to simulate microwave performances. The simulation results show that return loss can reach-21.5dB and isolation can reach-0.26dB when the distance between contacting metal and dielectric layer adopts 2ڌ̏̽, 6×?103ڌ̏̽2 of contacting area and 20ڌ̏̽ of groove depth.
Publisher
Trans Tech Publications, Ltd.