Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology-Reference-Cited by-同舟云学术

Reactive Ion Etching Parameter Effect on Aluminum Bond Pad Surface Morphology

Published:2014-04 Issue: Volume:925 Page:84-87
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Palianysamy Moganraj¹,Sauli Zaliman¹,Hashim Uda²,Retnasamy Vithyacharan¹,Taniselass Steven¹,Ayub Ramzan Mat²

Affiliation:

1. University Malaysia Perlis

2. Universiti Malaysia Perlis (UniMAP)

Abstract

Reactive Ion Etching (RIE) is an important process in fabrication of semiconductor devices. Design Of Experiment (DOE) has been used to study the effect of Reactive Ion Etch (RIE) towards surface morphology of aluminum bond pad. Important RIE factors involved in this experimental study are ratio of Tetrafluoromethane (CF4), Argon gas flow, BIAS, and ICP power. Different combinations of these factors produces different results of surface morphologies which was obtained using Atomic Force Microscopic (AFM). Produced results shows that overall surface roughness of the pad is affected by RIE and DOE offers a better way to optimize the desired outcome.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.925.84.pdf

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