The Ideal “Defects” of the Crystal Structure of GaAs

Author:

Iskakova Kulpash1,Akhmaltdinov Rif2,Amaonova Aisara3

Affiliation:

1. Kazakh National Pedagogical University

2. Caspian Public University

3. Kazakh National University

Abstract

The current industry needs for new results require current capabilities of computer technology can solve problems on a whole new level. This article briefly describes the algorithms for obtaining the structures and the appearance of discontinuities in the growth of crystals.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Reference9 articles.

1. T. Loucks, Augmented plane wave method. New York, W. A. Bendjamin Inc., 1967, pp.12-62.

2. Iskakova K.A., Ahmaltdinov R.F., Possibilities of the modifications of the method of calculation of wave function and zonal spectrum of crystal structure, PCI-2010 «12th International Conference on the Physics and Chemistry of Ice». Sapporo, Japan.

3. Iskakova K.A., Ahmaltdinov R.F., Modelling and calculation of FCC structures and principles of the algorithm structure Si, 88th annual meeting of the German Mineralogical Society, 19–22. September 2010 Munster, Germany.

4. Bugaev V.N., Chepulski R. V. 1. Basic theory. The symmetry of interatomic lattice potentials in general crystal structures. – Acta crystallogr. 1995, v. 51, No 4, p.456–462.

5. Sowa E.C., Gonis A. A multisite interaction expansion of the total energy in metals. Instrum. and Meth. Phys. Res. B. 1995, v. 102, No 1–4, p.1–2.

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