Effect of Substrate Temperature on the Properties of Hafnium Nitride Films Prepared by DC Sputtering

Abstract

Hafnium Nitride (HfN) thin films were fabricated by sputtering technique reaching a thickness of 250 nm. The substrate temperature was varied in 25, 100, 200, 300, 400 and 500 °C. Hardness, coefficient of friction, electrical resistivity and corrosion behavior of HfN thin films were studied. The structural changes were analyzed by X ray diffraction (XRD). The film growth at room temperature showed the highest hardness value (15.8 GPa), higher electrical resistivity (1.23´1013 mW-cm) and the lowest coefficient of friction (0.37), as well as the best polarization resistance. Increased substrate temperature tends to decrease the corrosion resistance (icorr: 17.50 nA/cm2 to 254.9 nA/cm2) and friction coefficient (0.37 to 0.58), however, all values are above of corrosion resistance and friction coefficient reported by TiSiNO and TiSiN films. Images of scanning electron microscopy (SEM) show that films presented low surface damage with no evidence of corrosion products.