The Analysis of Photocurrent Multiplication in Organic Dye CuPc Transistor with Wide Wavelength Light

Abstract

The organic photoelectric transistors using the vacuum evaporation and sputtering process are prepared in this paper. The Cu/CuPc/Al/CuPc/ITO layer based on vertical structure is grown through a CuPc active layer. The CuPc has excellent photosensitivity and it is easy to be fabricated into Short-Channel device with vertical structure. It is shown that I-V characteristics of organic photoelectric transistors are unsaturated. In this experiment the light source is the Bromine-tungsten lamp in the range of 300nm to 800nm. When the light source irradiates the device with Vec=2V, the operating current is 0.155μA which has been increased to 2.3-3.6 times as compared with the dark state. Therefore, the amplification coefficient of output current Iecis increasing in irradiation with smaller base voltage. As a result, the current amplification coefficient β is 5.25 and 2.14 with illumination and without illumination respectively.