Fabrication of Poly-Si Nanowire Using Conventional Photolithography Technique

Abstract

A simple method for the fabrication of polycrystalline silicon (poly-si) nanowires using conventional photolithography combined with thermal oxidation-size reduction method is presented. In our process, a polysilicon layer is deposited by low pressure chemical vapour deposition technique on SiO2 layer. Conventional photolithograpy is used to define the initial poly-si of dimensions 1 um. In order to miniaturize microwire to nanowire, size reduction method is employed using several time of dry thermal oxidation process. The characterization that is applied to measure the profile of poly-si nanowires using optical microscopy.