Affiliation:
1. New University of Lisbon
2. Universidade Nova de Lisboa
3. CENIMAT/I3N and CEMOP/UNINOVA
Abstract
Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room
temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO)
semiconductor, for the channel as well as for the drain and source regions. The obtained TFTs
operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7
cm2/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7×107. The high
performances presented by these TFTs associated to a high electron mobility, at least two orders of
magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage,
opens new doors for applications in flexible, wearable, disposable portable electronics as well as
battery-powered applications.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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