Abstract
In single crystal silicon (SCSi) MEMS devices, crystalline imperfection is recognized to favor
failure. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence of
the SCSi deformation by applying a mechanical force. High resolution X-ray diffraction methods
such as the rocking curve method and reciprocal space mapping were used to determine the strain as
well as the defect concentration in the crystal. The investigations also include the numerical
simulation of deformations.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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