Growth of Ru<sub>2</sub>Si<sub>3</sub> Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers-Reference-Cited by-同舟云学术

Growth of Ru₂Si₃ Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

Published:2018-09 Issue: Volume:386 Page:33-37
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Setojima Kenta¹,Ikeda Syuya¹,Ogi Kazuya¹,Terai Yoshikazu¹

Affiliation:

1. Kyushu Institute of Technology

Abstract

Semiconducting ruthenium silicide (Ru2Si3) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru2Si3 phase was confirmed by XRD and Raman measurements when the amorphous layers were annealed at 600−900 °C in a vacuum. The Ru2Si3 thin films showed a low electron density of 1 × 1016 cm-3 with a high mobility of 430−940 cm2V-1s-1. Photoluminescence (PL) at ~0.8 eV was observed in the Ru2Si3 films.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Link

https://www.scientific.net/DDF.386.33.pdf

Reference9 articles.

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