Wetting Layer and Formation of Metal - Semiconductor Interface

Abstract

A wetting layer with a nanophase structure was detected and identified before the first bulk phase during the formation of the metal-silicon interface by vapor-phase deposition at room temperature of the substrate. This became possible due to the developed technique for complex analysis of the structural-chemical state of the surface/ interface with help of Auger electron spectroscopy and electron energy loss spectroscopy, and also due to the method of physical vapor deposition at low temperature of vapor. The discovery this wetting layer and stage of its formation fundamentally changes the approach to the formation of contact between metal and silicon.