Silicon Carbide Solid-Phase Epitaxy on a Microporous Substratum

Abstract

The action flux of ions of inert gas on the substratum Si (100) leads to porosity into the crystal lattice and self-organization of these defects. The kinetic stochastic model of the phase transition at the initial stage is applied to find distributions of defects in sizes and on their coordinates in the layers. The accumulation of stress is determined by computer simulation. Layers of pores and cracks precede to solid state epitaxy of silicon carbide.