Surface Composition Transformation of Thin Film Based on Al Grown by CBE on the (001) GaAs Surface Due to Laser Assistance
Author:
Affiliation:
1. Aalto University School of Science and Technology
2. Institute of Radio Engineering and Electronics RAS
3. University of Liverpool
Abstract
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Radiation
Link
https://www.scientific.net/DDF.316-317.89.pdf
Reference7 articles.
1. J.M. Poate, J.W. Mayer, Laser Annealing of Semiconductors (Academic Press, New York, 1982).
2. T.A. Briantseva, Z.N. Lebedeva, I.A. Markov, T.J. Bullough and D.V. Lioubtchenko. Process-Induced Modification to the Surface of Crystalline GaAs Measured by Photometry. Applied Surface Science, 143 (1999) 223.
3. T.B. Joyce, Journal of Crystal Growth, 105 (1990) 299.
4. J. Rumberg, F. Reinhardt, W. Richter, T. Ferrell and J. Armstrong, Journal of Vacuum Science and Technology B, 13 (1995) 88.
5. J. Armstrong, T. Ferrell, T.B. Joyce, P. Knightley, T.J. Bullough and P.J. Goodhew, Journal of Crystal Growth, 120 (1992) 84.
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1. Study of the Transformation of Gallium Arsenide Surface Layers under the Action of Light by Means of Surface Acoustic Waves;Journal of Communications Technology and Electronics;2021-05
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