Elaboration and Characterization of in Doped TiO<sub>2</sub> Thin Films-Reference-Cited by-同舟云学术

Elaboration and Characterization of in Doped TiO₂ Thin Films

Published:2019-09 Issue: Volume:397 Page:59-68
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Hanini Faouzi¹,Bouabellou Abderrahmane²,Bouachiba Yassine³,Taabouche Adel⁴,Kermiche Fouad⁵,Mahtali Mohamed²,Daas Zahia²

Affiliation:

1. University Larbi Tébessi

2. University Frères Mentouri Constantine 1

3. Nouvelle Ville Universitaire Ali Mendjeli

4. University Kasdi Merbah

5. ENS El-Eulma

Abstract

Undoped and indium (In) doped TiO2 thin films were deposited by sol-gel method onto glass substrates. Structural, optical and electrical properties of films were studied. X-rays diffraction patterns showed that the TiO2 films consist of anatase phase. AFM images revealed that the surface roughness of In:TiO2 films is smoother than that of undoped TiO2 films. UV–Vis transmittance results showed TiO2 films have signiﬁcant optical absorption in the region of 300–350 nm and are fully transparent in the visible. Both film thickness and refraction index in dependence on the fraction of In doping are derived from TE and TM optical guided modes excited in a prism coupler. The optical gap Eg decreases from 3.50 eV for undoped TiO2 film to 3.43 eV at 2 at.% In doping and then increases for doping with indium at 10 at.%. The electrical characterization shows a maximum electrical conductivity of 2.7 (S/cm) obtained for the film doped with 10 at.% In.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Link

https://www.scientific.net/DDF.397.59.pdf

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