Affiliation:
1. Universiti Teknologi MARA
2. University Teknologi MARA (UiTM)
3. Universiti Teknologi MARA (UiTM)
Abstract
The resistive switching or memristive behavior of sputtered titania thin films sandwiched in between of three types of metal electrodes (Au, Pt and Ti) was investigated. The active region of the device consisted of two titania thin films, in which, the first layer was exposed to a plasma treatment to create the oxygen vacancies, before the deposition of the second layer. The whole active layer sputtering deposition process was conducted in a one-flow process without exposing the sample to the room ambient. From the I-V measurements, titania thin films in between Ti and Au did not show any resistive switching, but those sandwiched between Pt electrodes exhibit a noticeable memristive behavior. This may due to the metal work function of the platinum itself.
Publisher
Trans Tech Publications, Ltd.
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