Affiliation:
1. Petrozavodsk State University
Abstract
We explore the unipolar resistance switching effect in sandwich structures based on Nb, Ta and Zr oxide thin films. The structures were fabricated by pulsed laser deposition and low temperature anodic oxidation methods. After electroforming process memory cells demonstrate reproducible switching between low and high resistance states with a resistance ratio around 102. Nonvolatile resistance storage was traced within 40 days. The low-temperature anodic oxidation of Nb was found to be suitable to fabricate flexible nonvolatile memory elements. The parameters of resistive switching are not degraded after 100000 flexing.
Publisher
Trans Tech Publications, Ltd.
Reference15 articles.
1. International Technology Roadmap for semiconductors, 2012, information on http: /www. itrs. net.
2. G. W. Burr, B. N. Kurdi, J. C. Scott, C. H. Lam, K. Gopalakrishnan, R. S. Shenoy. IBM J. Res. Develop Vol. 52 (2008), p.449 – 464.
3. H.S. Wong, H.Y. Lee, S. Yu, Y.S. Chen, Y. Wu, P.S. Chen, B. Lee, F.T. Chen, M.J. Proceeding of the IEEE Vol. 100, No. 6, (2012), p.1951 – (1970).
4. Baek, I. G. et al. Electron Devices Meeting. IEDM Tech. Digest. IEEE International (2004) p.587–590.
5. J.Y. Ye, Y.Q. Li, J. Gao et al. Applied Physics Letters Vol. 97, (2010), p.132108.
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