Study of the Behavior of 3d-Shell Electrons in ZnO Based Varistors Doped with Semiconductor Additives-Reference-Cited by-同舟云学术

Study of the Behavior of 3d-Shell Electrons in ZnO Based Varistors Doped with Semiconductor Additives

Published:2015-03 Issue: Volume:738-739 Page:168-174
ISSN:1662-7482
Container-title:Applied Mechanics and Materials
language:
Short-container-title:AMM

Author:

Yang Tie Zhu¹,Zhu Qi Tao²,Wei Juan Juan³,Zhang Zhi Qiang¹,Zhang Rui Rui¹,Meng Shu Sheng¹,Zhou Shuai¹

Affiliation:

1. College for Science and Technology Zhengzhou

2. Zhongyuan University of Technology

3. No.53 Middle School Zhengzhou

Abstract

The behavior of 3d-shell electrons in ZnO-based varistors doped with semiconductor additives has been investigated. The 3d-shell electron details of the varistors can be extracted by a two-detector coincidence system of the Doppler broadening of positron annihilation radiation. It has been found that the 3d electron signal in semi-Z doped varistors is relatively high as compared with other varistors. The nonlinear coefficient of the sample decreases with the d-d interaction, and the leakage current of the specimen increases with the d-d interaction.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/AMM.738-739.168.pdf

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