Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas

Author:

Iwahata Shota1,Inaba Masaki1,Sebaai Farid2,Sánchez Efrain Altamirano2

Affiliation:

1. SCREEN Semiconductor Solutions Co., Ltd.

2. IMEC

Abstract

Thermally activated ozone gas (TAO) was demonstrated as an alternative technology to conventional spin-on carbon (SOC) stripping. The SOC stripping rate with ozone gas was found to be a function of substrate temperature and actual ozone amount calculated from the ozone flow rate and concentration. Furthermore, work function metal (WFM) stripping rate showed a high selectivity to SOC films, and the amount of oxidation TiN, which is a WFM metal, was also equivalent to conventional technology of SOC stripping. This TAO gas process can be used in clean tools, making it a promising integrated solution for SOC stripping followed by post clean.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Reference6 articles.

1. Gustaf Winroth, et al., Proc. SPIE 9052 90520Z-8 (2014).

2. Toby Hopf, et al., Proc. of SPIE, Vol. 10146 1014618-1-7 (2017).

3. J. Bao, et al., Journal of Vacuum Science & Technology B 26, 219 (2008).

4. E. I. Intezarova, et al., Bulletin of the Academy of Sciences of the USSR 16, p.2326–2331(1967).

5. Sidney W. Benson and Arthur E. Axworthy Jr., J. Chem. Phys. 26, 1718 (1957).

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