Electrical Conductivity Study of the Adsorbate-Induced Si(111) Surface Reconstructions after C60 Adsorption

Abstract

Electrical conductance of Si(111)6×6-Tl and Si(111)β√3×√3-Bi surfaces has been monitored in the course of fullerenes deposition. It has been found that dependence of surface conductivity on the adsorbed C60 dose can be understood in terms of charge transfer induced by interaction of fullerene molecules and substrate which can be explained by the acceptor-like behavior of fullerenes. For the Si(111)6×6-Tl surface decreasing of conductance is connected with depletion of metallic bands of the Tl double layer. For the Si(111)β√3×√3-Bi surface the conductivity is almost unchanged with C60 dose, but due to the fact that C60 layer on this surface form close-packed hexagonal arrays in the layer-by-layer mode, it can be used as a template for alkali-induced ultra-thin fulleride formation.