Model and Results of a Study of the Synthesis of Finely Dispersed Silicon Carbide in an Electro-Thermal Reactor

Author:

Kuzevanov V.S.1,Zakozhurnikov S.S.2,Zakozhurnikova Galina S.3

Affiliation:

1. National Research University «MPEI»

2. Moscow Financial and Law University MFUA

3. Volgograd State Technical University

Abstract

The high-temperature synthesis of silicon carbide (SiC) in an electro-thermal fluidized bed reactor (EFB) has advantages, in comparison with the production in resistance furnaces, in terms of specific energy consumption, productivity and the level of automation of the technological process. The basic equations of the fluidized-bed carbide formation process model are presented in the paper. The results of calculating the synthesis parameters of finely dispersed SiC in the stationary operation mode of the EFB reactor are also presented. The correspondence between the calculated and available experimental results on the output of the final product is shown.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Reference18 articles.

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2. V. Luchinin, Yu Tairov, Domestic semiconductor silicon carbide: a step towards parity, Electronics. 7 (2009) 12-15.

3. Zh.S. Ermekova, Z.A. Mansurov, R.G. Abdulkarimova, A.S. Mukasyan, Silicon carbide: production methods and application (review), Combustion and plasma chemistry. 8(1) (2010) 32-54.

4. M.V. Kamentsev, Artificial abrasive materials. The basics of technology, M .: Mashgiz, (1950).

5. S.P. Bogdanov, K. B. Kozlov, B.A. Lavrov, E.Ya. Nightingale, Electrothermal processes and reactors: textbook, SPb .: Prospectus of Science, (2009).

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