Affiliation:
1. Institute of Automation and Control Processes
Abstract
We report on the results of a study of the lateral photovoltaic effect in the Fe3O4/SiO2/n-Si(001) structure at temperatures of 300 and 122 K under continuous and pulsed illumination. It is found that when the temperature changes from 300 to 122 K, the LPE sensitivity decreases from 112 to 65 mV/mm. At pulsed illumination, an increase of rise time and a fall time is observed with decreasing temperature. From a consideration of the energy band diagrams and equivalent circuits of the Fe3O4/SiO2/n-Si structure, it is assumed that the detected temperature effects of LPE are due to the strong dependence of the magnetite film resistance on temperature.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics