New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon
Author:
Affiliation:
1. National Academy of Science of Belarus
2. Institute of Solid State and Semiconductor Physics
3. Defence Research Establishment
4. Lund University
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Link
https://www.scientific.net/SSP.69-70.309.pdf
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonlocal host isotope effect in silicon: High-resolution spectroscopy of the 29 cm−1oxygen vibrational line;Physical Review B;2012-08-06
2. Vibrational Absorption of Quasi-substitutional Atoms and Other Centres;Springer Series in Solid-State Sciences;2011-10-27
3. Vibrational Absorption of O and N Interstitial Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27
4. The spectral bandshape of the ν3(1136 cm− 1) vibration of oxygen in silicon and dilute silicon–germanium alloys;Journal of Physics: Condensed Matter;2010-11-26
5. Bistability and electrical activity of the vacancy-dioxygen complex in silicon;Semiconductors;2006-11
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