Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide

Author:

Scholz R.F.1,Gösele U.M.2,Breitenstein Otwin2,Egger U.3,Tan T.Y.

Affiliation:

1. HDK-Technik

2. Max Planck Institute of Microstructure Physics

3. University of Vienna

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Point Defects and Diffusion in Semiconductors;Handbook of Solid State Diffusion, Volume 1;2017

2. Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide;Journal of Applied Physics;2000-12-15

3. Phosphorus and antimony in GaAs as tracers for self-diffusion on the arsenic sublattice;Journal of Applied Physics;2000-01-15

4. Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs;Applied Physics A: Materials Science & Processing;1999-09-01

5. Quantum well intermixing caused by nonstoichiometric InP;Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)

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