Structure of Ni80Fe20 Films Deposited on SiO2/Si(100) by Direct Current Magnetron Sputtering System with the Oblique Target

Abstract

About 300nm-thick Ni80Fe20 films were deposited on SiO2/Si (100) substrates at 300 K and 673 K in 1.2 Pa and 0.8 Pa Ar gas by a direct current (DC) magnetron sputtering system with the oblique target. The films grown at 300 K have a predominate [11 crystal orientation in the growth direction whereas those deposited at 673 K grow mainly with a [11 crystalline orientation in the growth direction. All the films have a columnar structure. The grain size increases with increasing deposition temperature. The films grown at 673 K are dense compared with those grown at 300 K. The film deposited at 673 K in 0.8 Pa Ar has the lowest resistivity.